US scientists develop new silicon carbide diodes

Abstract Allegro Corporation of Massachusetts, USA, recently released the latest generation FMCA series of silicon carbide Schottky barrier diodes (SiC-SBD), also known as silicon carbide metal-semiconductor diodes. FMCA series silicon carbide diodes achieve lower leakage current and high temperature...

Allegro, Inc. of Massachusetts, USA, recently released the latest generation FMCA series of silicon carbide Schottky barrier diodes (SiC-SBD), also known as silicon carbide metal-semiconductor diodes. The FMCA series of silicon carbide diodes enable low leakage current and high speed switching at high temperatures. The technology was developed by Allegro and produced by Sanken Electric Company of Japan. The product is targeted at industrial and computer high-end devices, including servers and high-frequency rectifier circuits.

The FMCA series of diodes use a new generation of power semiconductor SiC and 650 volt breakdown voltage, making it more suitable for uninterruptible current mode PFC circuits. This design structure greatly reduces the energy loss caused by the diode reverse recovery current. At the same time, the high-speed switching function and energy-saving features of the diode also make it possible for the device to be miniaturized and miniaturized.

Since the recovery loss of SiC-SBD and the resistance of SiC-MOSFET high-speed switch are relatively low, and thermal runaway is also minimized, FMCA diode has the advantages of compact and high-efficiency high-current power supply, and can be stabilized under high temperature conditions. Switching function; this new type of silicon carbide diode is currently mainly packaged in TO-220 size. (Chinese superhard material network translation: Wang Xian)

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